BD825 데이터 시트보기 (PDF) - Philips Electronics
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BD825 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN power transistors
Product specification
BD825; BD829
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
IE = 0; VCB = 30 V
−
IE = 0; VCB = 30 V; Tj = 125 °C
−
emitter cut-off current
IC = 0; VEB = 5 V
−
DC current gain
VCE = 2 V; see Fig.2
IC = 5 mA
40
IC = 150 mA
95
IC = 500 mA
25
collector-emitter saturation voltage IC = 500 mA
−
base-emitter voltage
IC = 500 mA; VCE = 2 V
−
transition frequency
IC = 50 mA; VCE = 5 V; f = 100 MHz −
−
100 nA
−
10 µA
−
100 nA
−
−
−
165
−
−
−
500 mV
−
1
V
250 −
MHz
160
handbook, full pagewidth
hFE
120
80
40
0
10−1
VCE = 2 V
MBH729
1
10
102
Fig.2 DC current gain; typical values.
IC (mA)
103
1998 May 29
4
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