LH5164AZ8 데이터 시트보기 (PDF) - Sharp Electronics
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LH5164AZ8 Datasheet PDF : 9 Pages
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LH5164AZ8
CMOS 64K (8K × 8) Static RAM
AC CHARACTERISTICS
(1) READ CYCLE (TA = -30 to +60°C, VCC = 3.0 to 3.6 V)
PARAMETER
SYMBOL MIN.
Read cycle
tRC
200
Address access time
tAA
Chip enable
access time
(CE1)
(CE2)
tACE1
tACE2
Output enable access time
tOE
Output hold time
tOH
10
Chip enable to
output in Low-Z
(CE1)
(CE2)
tLZ1
20
tLZ2
20
Output enable to output in Low-Z
tOLZ
10
Chip enable to
output in High-Z
(CE1)
(CE2)
tHZ1
0
tHZ2
0
Output disable to output in High-Z
tOHZ
0
MAX.
200
200
200
150
60
60
40
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE (TA = -30 to +60°C, VCC = 3.0 to 3.6 V)
PARAMETER
SYMBOL
MIN.
MAX.
Write cycle time
Chip enable to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Data valid to end of write
Data hold time
Output active from end of write
WE to output in High-Z
OE to output in High-Z
tWC
tCW
tAW
tAS
tWP
tWR
tDW
tDH
tOW
tWZ
tOHZ
200
180
180
0
150
0
100
0
20
0
60
0
40
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
PARAMETER
Input voltage amplitude
Input rise/fall time
Timing reference level
Output load conditions
MODE
0 to VCC
10 ns
1.5 V
No load
CAPACITANCE (TA = 25°C, f = 1 MHz)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
Input capacitance
CIN
VIN = 0 V
7
Input/output capacitance
CI/O
VI/O = 0 V
10
NOTE:
This parameter is sampled and not production tested.
UNIT
pF
pF
4
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