MPSA28 데이터 시트보기 (PDF) - Central Semiconductor
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MPSA28 Datasheet PDF : 3 Pages
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MPSA28
MPSA29
SILICON
NPN DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA28 and
MPSA29 are silicon NPN Darlington transistors
manufactured by the epitaxial planar process and
designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=60V
ICBO
VCB=80V
ICES
VCE=60V
ICES
VCE=80V
IEBO
VEB=10V
BVCBO
IC=100μA
BVCES
IC=100μA
BVEBO
IE=10μA
VCE(SAT) IC=10mA, IB=10μA
VCE(SAT) IC=100mA, IB=100μA
VBE(ON)
VCE=5.0V, IC=100mA
hFE
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=100mA
fT
VCE=5.0V, IC=10mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
ΘJA
ΘJC
MPSA28
80
MPSA29
100
80
100
12
500
625
-65 to +150
200
83.3
MPSA28
MIN MAX
-
100
-
-
-
500
-
-
-
100
80
-
80
-
12
-
-
1.2
-
1.5
-
2.0
10,000 -
10,000 -
125
-
-
8.0
MPSA29
MIN MAX
-
-
-
100
-
-
-
500
-
100
100
-
100
-
12
-
-
1.2
-
1.5
-
2.0
10,000 -
10,000 -
125
-
-
8.0
UNITS
V
V
V
mA
mW
°C
°C/W
°C/W
UNITS
nA
nA
nA
nA
nA
V
V
V
V
V
V
MHz
pF
R0 (28-May 2013)
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