MPSA29 데이터 시트보기 (PDF) - Motorola => Freescale
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MPSA29 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
Order this document
by MPSA28/D
MPSA28
MPSA29*
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSA28 MPSA29
80
100
80
100
12
500
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
MPSA28
MPSA29
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSA28
MPSA29
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
(VCE = 80 Vdc, VBE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
MPSA28
MPSA29
MPSA28
MPSA29
ICBO
ICES
IEBO
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Typ
Max
Unit
80
—
100
—
80
—
100
—
12
—
Vdc
—
—
Vdc
—
—
—
Vdc
nAdc
—
—
100
—
—
100
nAdc
—
—
500
—
—
500
—
—
100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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