Philips Semiconductors
NPN high-voltage transistors
Product specification
BST39; BST40
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 350 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
MARKING
TYPE NUMBER
BST39
BST40
MARKING CODE
AT1
AT2
handbook, halfpage
2
3
1
1
2
Bottom view
3
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BST39
BST40
collector-emitter voltage
BST39
BST40
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
−
400
V
−
300
V
−
350
V
−
250
V
−
5
V
−
100
mA
−
200
mA
−
100
mA
−
1.3
W
−65
+150 °C
−
150
°C
−65
+150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 26
2