BF487 데이터 시트보기 (PDF) - Philips Electronics

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BF487

NPN high-voltage transistors

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BF483; BF485; BF487

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on a printed-circuit board.

CONDITIONS

note 1

VALUE

150

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

VCEsat

Cre

fT

collector-emitter saturation voltage

feedback capacitance

transition frequency

CONDITIONS

MIN.

IE = 0; VCB = 300 V

−

IE = 0; VCB = 250 V; Tj = 150 °C

−

IC = 0; VEB = 5 V

−

IC = 25 mA; VCE = 20 V

50

IC = 40 mA; VCE = 20 V

20

IC = 30 mA; IB = 5 mA

−

IC = ic = 0; VCE = 30 V; f = 1 MHz

−

IC = −10 mA; VCE = 10 V; f = 100 MHz 70

MAX.

20

20

100

−

−

600

1.4

110

UNIT

nA

µA

nA

mV

pF

MHz

1999 Apr 12

3

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