BF469 데이터 시트보기 (PDF) - Philips Electronics
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BF469 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistors
Product specification
BF469; BF471
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BF469
BF471
collector-emitter voltage
BF469
BF471
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb ≤ 114 °C
MIN. MAX. UNIT
−
250
V
−
300
V
−
250
V
−
300
V
−
5
V
−
50
mA
−
100
mA
−
50
mA
−
1.8
W
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
in free air; note 1
thermal resistance from junction to mounting base
100
K/W
20
K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead
minimum 10 × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
IE = 0; VCB = 200 V
IE = 0; VCB = 200 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 25 mA; VCE = 20 V
IC = 30 mA; IB = 5 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
50
−
−
60
MAX.
10
10
50
−
0.6
1.8
−
UNIT
nA
µA
nA
V
pF
MHz
1996 Dec 09
3
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