BSR19A 데이터 시트보기 (PDF) - Continental Device India Limited
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BSR19A Datasheet PDF : 3 Pages
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BSR19
BSR19A
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
VCB0
VCE0
Emitter–base voltage (open collector)
VEB0
Collector current
IC
Total power dissipation up to Tamb = 25 °C
Ptot
Junction temperature
Tj
Storage temperature
Tstg
max.
max.
max.
max.
max.
max.
160
180 V
140
160 V
6
V
600
mA
250
mW
150
°C
–55 to +150 ° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a =
500
K/W
CHARACTERISTICS
Tarnb = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 100 V
IE = 0; VCB = 120 V
IE = 0; VCB = 100 V; Tamb = 100°C
IE = 0; VCB = 120 V; Tamb = 100°C
Emitter cut–off current
IC = 0; VEB = 4,0 V
Breakdown voltages
IC: 1,0 mA; IB = 0
IC = 100 mA; IE = 0
IC = 0; IE = 10 mA
Saturation voltages
IC = 10 mA; IB = 1,0 mA
IC = 50mA; IB = 5,0 mA
D.C. current gain
IC = 1,0 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
IC = 50 mA; VCE = 5 V
Small–signal current gain
IC = 1,0 mA; VCE = 10 V; f = 1 kHz
Output capacitance at f = 1 MHz
IE = 0; VCB = 10 V
BSR19 BSR19A
ICBO
ICBO
ICBO
ICBO
max. 100
max.
max. 100
max.
nA
50 nA
mA
50 mA
IEBO
max. 50 50 nA
V(BR)CEO min. 140
V(BR)CBO min. 160
V(BR)EBO min. 6,0
160 V
180 V
6,0 V
VCEsat
VBEsat
VCEsat
VBEsat
max. 0,15
max. 1,0
max. 0,25
max. 1,2
0,15 V
1,0 V
0,20 V
1,0 V
hFE
min. 60 80
hFE
min. 60 80
max. 250 250
hFE
min. 20 30
hfe
min. 50 50
max. 200 200
Co
max. 6
6 pF
Continental Device India Limited
Data Sheet
Page 2 of 3
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