Philips Semiconductors
NPN high-voltage transistors
Product specification
BSR19; BSR19A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSR19
BSR19A
collector-emitter voltage
BSR19
BSR19A
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
160
V
−
180
V
−
140
V
−
160
V
−
6
V
−
300
mA
−
600
mA
−
100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
VALUE
500
UNIT
K/W
1997 Apr 21
3