BSR19 데이터 시트보기 (PDF) - NXP Semiconductors.
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BSR19 Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN high voltage transistors
Product data sheet
BSR19; BSR19A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
ICBO
IEBO
hFE
VCEsat
VCEsat
Cc
fT
collector cut-off current
BSR19
collector cut-off current
IE = 0 A; VCB = 100 V
IE = 0 A; VCB = 100 V; Tamb = 100 °C
BSR19A
emitter cut-off current
IE = 0 A; VCB = 120 V
IE = 0 A; VCB = 120 V; Tamb = 100 °C
IC = 0 A; VEB = 4 V
DC current gain
BSR19
IC = 1 mA; VCE = 5 V
BSR19A
DC current gain
BSR19
IC = 10 mA; VCE = 5 V
BSR19A
DC current gain
BSR19
IC = 50 mA; VCE = 5 V
BSR19A
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
collector-emitter saturation voltage IC = 50 mA; IB = 5 mA
BSR19
BSR19A
collector capacitance
transition frequency
IE = 0 A; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
−
−
60
80
60
80
20
30
−
−
−
−
100
MAX. UNIT
100
nA
100
µA
50
nA
50
µA
50
nA
−
−
250
250
−
−
150
mV
250
mV
200
mV
6
pF
300
MHz
2004 Mar 15
4
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