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BFN19 데이터 시트보기 (PDF) - Infineon Technologies

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BFN19
Infineon
Infineon Technologies Infineon
BFN19 Datasheet PDF : 6 Pages
1 2 3 4 5 6
PNP Silicon High-Voltage Transistors
Suitable for video output stages in TV sets
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN18 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BFN19
1
2
3
2
Type
BFN19
Marking
DH
Pin Configuration
1=B
2=C
3=E
Package
SOT89
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp 10 ms
Base current
Peak base current
Total power dissipation-
TS 130 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
300
300
5
200
500
100
200
1
150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
20
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
W
°C
Unit
K/W
1
2011-09-30

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