MPSA93 데이터 시트보기 (PDF) - Infineon Technologies

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MPSA93

PNP Silicon High-Voltage Transistors

Infineon Technologies 

MPSA 92

MPSA 93

Electrical Characteristics

at TA = 25 °C, unless otherwise specified.

Parameter

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

MPSA 92

MPSA 93

Collector-base breakdown voltage

IC = 100 µA, IB = 0

MPSA 92

MPSA 93

Emitter-base breakdown voltage

IE = 100 µA, IB = 0

Collector-base cutoff current

VCB = 200 V

VCB = 160 V

VCB = 200 V, TA = 150 °C

VCB = 160 V, TA = 150 °C

MPSA 92

MPSA 93

MPSA 92

MPSA 93

Emitter-base cutoff current

VBE = 3 V, IC = 0

DC current gain 1)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

Collector-emitter saturation voltage 1)

IC = 20 mA, IC = 2 mA

MPSA 92

MPSA 93

Base-emitter saturation voltage 1)

IC = 20 mA, IB = 2 mA

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 10 V, f = 100 MHz

Collector-base capacitance

VCB = 20 V, f = 1 MHz

MPSA 92

MPSA 93

Symbol

Limit Values

Unit

min. typ. max.

V(BR)CE0

300 –

200 –

V(BR)CB0

300 –

200 –

V(BR)EB0

5

–

ICB0

–

–

–

–

–

–

–

–

ICER

–

–

hFE

25

–

40

–

25

–

VCEsat

–

–

–

–

VBEsat

–

–

V

–

–

–

–

–

100 nA

100 nA

20

µA

20

µA

100 nA

–

–

–

–

V

0.5

0.4

0.9

fT

–

Cobo

–

–

70

–

–

6

–

8

MHz

pF

1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

2

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