2N6661DCSM 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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2N6661DCSM Datasheet PDF : 2 Pages
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2N6661DCSM
STATIC ELECTRICAL RATINGS (Each Side - Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain – Source Breakdown Voltage
VGS = 0V
ID = 1.0µA
90
-
VGS(th)
Gate – Source threshold Voltage
VDS = VGS
ID = 1.0mA
TC = 125°C
0.8
-
0.3
-
IGSS
Gate – Source Leakage Current
VGS = ±20V
TC = -55°C
VDS = 0V
TC = 125°C
-
-
-
-
-
-
IDSS
Zero Gate Voltage Drain Current
VDS = 72V
VGS = 0V
TC = 125°C
-
-
-
-
ID(on)
RDS(on)
On – State Drain Current (note 3)
Drain – Source On Resistance
(note 3)
VDS = 15V
VGS = 5V
VGS = 10V
VGS = 10V
ID = 0.3A
ID = 1.0A
TC = 125°C
1.5
-
-
-
-
-
-
-
VDS(on) Drain – Source On Voltage (note 3)
gFS
Forward Transconductance (Note 3)
VSD
Diode Forward Voltage (Note 3)
VGS = 5V
VGS = 10V
VDS = 7.5V
VGS = 0V
ID = 0.3A
ID = 1.0A
TC = 125°C
ID = 0.475A
Is = 0.86A
-
-
-
-
-
-
170 -
0.7
-
Max.
-
2
-
2.5
±100
±500
1.0
100
-
5.3
4
7.5
1.6
4
7.5
-
1.4
Unit
V
nA
µA
A
Ω
V
ms
V
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Td(on)
Turn-On Delay
Td(off)
Turn-Off Delay Time
VDS = 25V
f = 1.0MHz
VDD = 25V
RGS = 50Ω
VGS = 0V
ID = 1A
(Note 3)
-
50
-
-
40
-
pF
-
10
-
-
10
-
ns
-
10
-
MATCHING CHARACTERISTICS FET1 to FET2
VGS(th) M
Gate – Source threshold Voltage
Matching
VDS = VGS
ID = 1mA
-
-
±25 mV
gFSM
Forward Transconductance Matching
(Note 3)
VDS = 7.5V
ID = 0.475A
-
-
50
ms
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8874, ISSUE 1
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