STPS10L45CG-TR 데이터 시트보기 (PDF) - STMicroelectronics

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STPS10L45CG-TR

LOW DROP POWER SCHOTTKY RECTIFIER

STMicroelectronics 

®

STPS10L45CT/CG/CF/CFP

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

IF(AV)

VRRM

Tj (max)

VF (max)

2x5 A

45 V

150°C

0.46 V

FEATURES AND BENEFITS

s LOW FORWARD VOLTAGE DROP MEANING

VERY SMALL CONDUCTION LOSSES

s LOW SWITCHING LOSSES ALLOWING HIGH

FREQUENCY OPERATION

s INSULATED PACKAGE:

TO-220FPAB

Insulating voltage = 2000V DC

Capacitance = 12pF

ISOWATT220AB,

s AVALANCHE CAPABILITY SPECIFIED

A1

K

A2

K

A2

K

A1

TO-220FPAB

STPS10L45CFP

A2

A1

D2PAK

STPS10L45CG

DESCRIPTION

Dual center tap Schottky rectifiers suited for

Switched Mode Power Supplies and high

frequency DC to DC converters.

Packaged in TO-220AB, ISOWATT220AB,

TO-220FPAB and D2PAK, these devices are

intended for use in low voltage, high frequency

inverters, free-wheeling and polarity protection

applications.

ABSOLUTE RATINGS (limiting values, per diode)

A2

A1 K

TO-220AB

STPS10L45CT

A2

K

A1

ISOWATT220AB

STPS10L45CF

Symbol

Parameter

Value

VRRM Repetitive peak reverse voltage

45

IF(RMS) RMS forward current

20

IF(AV)

Average

forward current

TO-220AB

D2PAK

Tc =135°C Per diode

δ = 0.5

Per device

5

10

ISOWATT220AB Tc =115°C Per diode

TO-220FPAB

δ = 0.5

Per device

5

10

IFSM Surge non repetitive forward current

tp = 10 ms Sinusoidal

150

IRRM Repetitive peak reverse current

tp = 2 µs square F=1kHz

1

IRSM Non repetitive peak reverse current

tp = 100 µs square

2

PARM Repetitive peak avalanche power

tp = 1µs Tj = 25°C

2700

Tstg Storage temperature range

- 65 to + 150

Tj

Maximum operating junction temperature *

150

dV/dt Critical rate of rise of reverse voltage

10000

* : dPtot <

1

thermal runaway condition for a diode on its own heatsink

dTj

Rth( j − a)

July 2003 - Ed: 3B

Unit

V

A

A

A

A

A

A

W

°C

°C

V/µs

1/7

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