MCP73871 데이터 시트보기 (PDF) - Microchip Technology
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MCP73871
Microchip Technology
MCP73871 Datasheet PDF : 38 Pages
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MCP73871
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for VIN = VREG + 0.3V to 6V, TA = -40°C to +85°C.
Typical values are at +25°C, VIN = [VREG (typical) + 1.0V]
Parameters
Sym
Min
Typ
Max Units
Conditions
Input Current Limit Control (ICLC)
USB-Port Supply Current Limit
ILIMIT_USB
80
90
100
mA PROG2 = Low, SEL = Low
400
450
500
mA PROG2 = High, SEL = Low
AC-DC Adapter Current Limit
ILIMIT_AC
1500
1650
Voltage Proportional Charge Control (VPCC - Input Voltage Regulation)
1800
TA=-5°C to +55°C
mA SEL = High, TA=-5°C to +55°C
VPCC Input Threshold
VVPCC
—
1.23
—
VPCC Input Threshold Tolerance
VRTOL
-3
—
+3
Input Leakage Current
ILK
—
0.01
1
Precondition Current Regulation (Trickle Charge Constant-Current Mode)
V IOUT=10 mA
% TA=-5°C to +55°C
µA VVPCC = VDD
Precondition Current Ratio
IPREG / IREG
7.5
Precondition Current Threshold Ratio
VPTH / VREG
69
Precondition Hysteresis
VPHYS
—
Automatic Charge Termination Set Point
10
12.5
% PROG1 = 1.0 kΩ to 10 kΩ
TA=-5°C to +55°C
72
75
% VBAT Low-to-High
105
—
mV VBAT High-to-Low
Charge Termination Current Ratio
Automatic Recharge
ITERM
75
100
125
mA PROG3 = 10 kΩ
7.5
10
12.5 mA PROG3 = 100 kΩ
TA=-5°C to +55°C
Recharge Voltage Threshold Ratio
VRTH
VREG -
0.21V
VREG -
0.15V
VREG -
0.09V
V VBAT High-to-Low
IN-to-OUT Pass Transistor ON-Resistance
ON-Resistance
Charge Transistor ON-Resistance
RDS_ON
—
200
—
mΩ VDD = 4.5V, TJ = 105°C
ON-Resistance
RDSON_
BAT-to-OUT Pass Transistor ON-Resistance
—
200
—
mΩ VDD = 4.5V, TJ = 105°C
ON-Resistance
Battery Discharge Current
RDS_ON
—
200
—
mΩ VDD = 4.5V, TJ = 105°C
Output Reverse Leakage Current
IDISCHARGE
—
—
—
—
30
40
µA Shutdown
(VBAT < VDD < VUVLO)
30
40
µA Shutdown (0 < VDD < VBAT)
30
40
µA VBAT = Power Out, No Load
-6
-13
µA Charge Complete
Status Indicators - STAT1 (LBO), STAT2, PG
Sink Current
Low Output Voltage
Input Leakage Current
Low Battery Indicator (LBO)
ISINK
VOL
ILK
—
16
35
mA
—
0.4
1
V ISINK = 4 mA
—
0.01
1
µA High Impedance, VDD on pin
Low Battery Detection Threshold
VLBO
—
Disable
—
2.85
3.0
3.15
2.95
3.1
3.25
VBAT > VIN, PG = Hi-Z
V TA=-5°C to +55°C
V
3.05
3.2
3.35
V
Low Battery Detection Hysteresis
VLBO_HYS
—
150
—
mV VBAT Low-to-High
Note 1: The value is ensured by design and not production tested.
2: The maximum available charge current is also limited by the value set at PROG1 input.
DS22090B-page 6
© 2009 Microchip Technology Inc.
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