1SS184 데이터 시트보기 (PDF) - Semtech Electronics LTD.

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1SS184

SILICON EPITAXIAL PLANAR DIODE

Semtech Electronics LTD. 

1SS184

SILICON EPITAXIAL PLANAR DIODE

Features

• Small package

• Low forward voltage

• Fast reverse recovery time

• Small total capacitance

Applications

• Ultra high speed switching application

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Maximum Peak Reverse Voltage

Reverse Voltage

Average Forward Current

Maximum Peak Forward Current

Surge Current (10 ms)

Power Dissipation

Junction Temperature

Storage Temperature Range

Characteristics at Ta = 25 OC

Parameter

Forward Voltage

at IF = 100 mA

Reverse Current

at VR = 30 V

at VR = 80 V

Total Capacitance

at VR = 0 , f = 1 MHz

Reverse Recovery Time

at IF = 10 mA

3

12

Marking Code: A4

SOT-23 Plastic Package

Symbol

Value

Unit

VRM

85

V

VR

80

V

IO

100

mA

IFM

300

mA

IFSM

2

A

Ptot

150

mW

Tj

150

OC

Ts

- 55 to + 150

OC

Symbol

Max.

Unit

VF

1.2

V

IR

0.1

µA

0.5

CT

3

pF

trr

4

ns

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 10/10/2008

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