BUR52_12 데이터 시트보기 (PDF) - Comset Semiconductors
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BUR52_12 Datasheet PDF : 3 Pages
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BUR52
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
ICEO
IEBO
ICBO
VCEO(SUS)
VEBO
VCE(SAT)
VBE(SAT)
hFE
Is/b
fT
ton
ts
ff
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Collector-Emitter Sustaining
Voltage (*)
Emitter-Base Voltage
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage
(*)
DC Current Gain (*)
Second Breakdown Collector
Current
Transition - Frequency
Turn-on time
Storage Time
Fall Time
Clamped Es/b Collector Current
VCE = 250 V, (IB = 0)
VBE = 7 V, (IC = 0)
TCASE = 25°C
VCB = 350 V, (IE = 0)
TCASE = 125°C
VC = 350 V, (IE = 0)
IC = 200 A
IC = 10 mA, (IC = 0)
IC = 25 A, IB = 2 A
IC = 40 A, IB = 4 A
IC = 25 A, IB = 2 A
IC = 40 A, IB = 4 A
VCE = 4 V, IC = 5 A
VCE = 4 V, IC = 40 A
VCE = 20 V, t = 1 s
VCE = 5 V, IC = 1 A
f = 1 MHz
VCC = 100 V
IC = 40 A ; IB1 = 4 A
VCC = 100 V
IC = 40 A
IB1= 4 A, IB2 = -4 A
Vclamp = 250 V
L = 500 µH
(*) Pulse duration = 300 µs, Duty Cycle ∠ 1.5 %
-
-
1 mA
-
- 0.2 µA
-
- 0.2
mA
-
-
2
250 -
-
V
10 -
-
V
-
-
1
V
- 0.7 1.5
-
- 1.8
V
- 1.5 2
20 - 100
-
15 -
-
17.5 -
-
A
-
10 16 MHz
- 0.3 1 µs
- 1.2 2
µs
- 0.2 0.6
40 -
-
A
COMSET SEMICONDUCTORS
2/3
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