2SC4774(2005) 데이터 시트보기 (PDF) - Unisonic Technologies

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2SC4774
(Rev.:2005)

HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)

Unisonic Technologies 

2SC4774

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

12

V

Collector-Emitter Voltage

VCEO

6

V

Emitter-Base Voltage

VEBO

3

V

Collector Current

IC

50

mA

Collector Power Dissipation

PD

0.2

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL SPECIFICATIONS (Ta=25°C)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

Output Capacitance

Output-On Resistance

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

BVCBO IC =10µA

12

V

BVCEO IC =1mA

6

V

BVEBO IE =10µA

3

V

ICBO VCB =10V

0.5 V

IEBO VEB =2V

0.5 µA

VCE(SAT) IC/IB =10mA/1mA

0.3 µA

hFE VCE/IC =5V/5mA

270

560

fT VCE =5V, IE = −10mA, f=200MHz

300 800

MHz

Cob VCB =10V, IE =0A, f=1MHz

1 1.7 pF

RON IB =3mA, VIN =100mVrms, f=500kHz

2

Ω

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R220-017,A

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