2SC4774(2005) 데이터 시트보기 (PDF) - Unisonic Technologies
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2SC4774 Datasheet PDF : 4 Pages
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2SC4774
TYPICAL CHARACTERISTIC
Grounded Emitter Output Characteristics (Ⅰ)
10 Ta=25℃
8
35mA
30mA
25mA
6
20mA
15mA
4
10mA
2
5mA
0
IB=0μA
0
1
2
3
4
5
Collector to Emitter Voltage, VCE (V)
Grounded Emitter Propagation Characteristics
50
VCE=5V
40
30
20
10
0
0
0.4 0.8 1.2 1.6 2.0
Base to Emitter Voltage, VBE (V)
1000
500
Collector-Emitter Saturation Voltage vs.
Collector Current
Ta=25℃
IC/IB=10
200
100
50
20
10
5
0.1 0.2 0.5 1 2 5 1020 50
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Grounded Emitter Output Characteristics (Ⅱ)
50
Ta=25℃
40
0.5mA 0.4mA
0.3mA
0.2mA
30
0.1mA
20
10
0
0
IB=0mA
0.1 0.2 0.3 0.4 0.5
Collector to Emitter Voltage, VCE (V)
DC Current Gain vs. Collector Current
1000
500
Ta=25℃
VCE=5V
200
100
50
20
10
0.1 0.2 0.5 1 2
5 1020 50
CollectorCurrent, IC(mA)
Gain Bandwidth Product vs. Collector Current
2000
1000
Ta=25℃
VCE=5V
500
200
100
50
20
0.1 0.2 0.5 1 2
5 1020 50
Collector Current, IC (mA)
3 of 4
QW-R220-017,A
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