2SD1815 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1815

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD1815

DESCRIPTION

·Excellent linearity of hFE

·Small and slim package making it easy to make 2SD1815/2SB1215-used set smaller

·Low collector-to-emitter saturation voltage

·High fT

·Fast switching speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Relay drivers,High speed inverters,converters and other

general high-current switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

120

V

100

V

6

V

IC

Collector Current-Continuous

3

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

6

A

20

W

1.0

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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