2SD1815 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1815

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD1815

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 1.5A; IB= 150mA

V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10uA; IC= 0

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE1

DC Current Gain

IC= 0.5A; VCE= 5V

hFE2

DC Current Gain

IC= 2A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V

MIN TYP. MAX UNIT

0.4

V

1.2

V

120

V

100

V

5

V

1

uA

1

uA

70

400

40

25

pF

180

MHz

 hFE1 Classifications

Q

R

S

T

70-140 100-200 140-280 200-400

isc website：www.iscsemi.com

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