IRFB52N15DPBF 데이터 시트보기 (PDF) - International Rectifier
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IRFB52N15DPBF Datasheet PDF : 11 Pages
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IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 36A
10
8
VDS= 120V
VDS= 75V
6
4
2
0
0 10 20 30 40 50 60 70
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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