BAT41_99 데이터 시트보기 (PDF) - STMicroelectronics
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BAT41_99 Datasheet PDF : 4 Pages
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BAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF
IFRM
IFSM
Ptot
Tstg
Tj
TL
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
Power Dissipation*
Storage and Junction Temperature Range
Ta = 25 °C
tp ≤ 1s
δ ≤ 0.5
tp ≤ 10ms
Ta = 95°C
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
THERMAL RESISTANCE
Symbol
Rth(j-a)
Junction-ambient*
Test Conditions
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
VBR
VF * *
IR * *
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 100°C
Test Conditions
IR = 100µA
IF = 1mA
IF = 200mA
DYNAMIC CHARACTERISTICS
Symbol
C
Tj = 25°C
Test Conditions
VR = 1V
* On infinite heatsink with 4mm lead length
* * Pulse test: tp ≤ 300µs δ < 2%.
August 1999 Ed: 1A
VR = 50V
f = 1MHz
DO 35
(Glass)
Value
Unit
100
V
100
mA
350
mA
750
mA
100
mW
- 65 to +150
°C
- 65 to +125
°C
230
°C
Value
300
Unit
°C/W
Min. Typ. Max. Unit
100
V
0.4 0.45
V
1
0.1
µA
20
Min. Typ. Max. Unit
2
pF
1/4
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