1N47 데이터 시트보기 (PDF) - New Jersey Semiconductor
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1N47 Datasheet PDF : 1 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N47
GOLD BONDEDGERMANIUM DIODE
FEATURES
Low forward voltage drop—low power consumption
Thirty years of proven reliability—one million hours mean time between failures (MTBF)
Very low noise level
Metallurgically bonded
ABSOLUTE MAXIMUM RATINGS (at 25 °C, unless otherwise specified)
Peak Inverse Voltage
Peak Forward Current
Operating Temperature Range
Average Power Dissipation
ELECTRICAL CHARACTERISTICS
Symbol
Peak Inverse Voltage
PIV
Reverse Current
Ir
Reverse Current
Ir
Forward Voltage
Vf
115 Volts
500 mA
- 65 °C to 85 °C
80 mW
Conditions Win Max Unit
1 mA 115
V
3V
4 |iA
50 V
400 HA
5 mA
1
V
T°C
25 °C
25 °C
°C
25 °C
MECHANICAL
.021'
19
HKI=
=*=,
, 1" .300'
MIN
MAX
' .107' DIA
.095'
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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