40N10 데이터 시트보기 (PDF) - CHONGQING PINGYANG ELECTRONICS CO.,LTD
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40N10 Datasheet PDF : 2 Pages
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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃，
/ΔTJ
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=20A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=40V,ID=40A,
Turn-On Rise Time
tr
RG=25Ω
(Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=80V,ID=40A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=40A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=40A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=20V,L=0.5mH,Rg=25Ω,IAS=40A , TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
100 －
－
V
－
0.5
－ V/℃
－
－
1
uA
－
－
100
nA
－
－ -100 nA
2
－
4
V
－
－
40
mΩ
－ 680 880
pF
－
75
100
pF
－
3.8
－
pF
－
17
－
ns
－
30
－
ns
－
42
－
ns
－
20
－
ns
－
－ 300
nC
－
－ 150
nC
－
－
7.5
nC
－
－
40
A
－
－
160
A
－
－
1.5
V
－ 575 －
ns
－ 3.65 －
uC
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