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2SC4617 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2SC4617/D
Preliminary Information
NPN Silicon General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier applications.
This device is housed in the SOT-416/SC–90 package which is designed for
low power surface mount applications, where board space is at a premium.
• Reduces Board Space
• High hFE, 210 – 460 (typical)
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
2SC4617
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
50
50
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
2
1
CASE 463–01, STYLE 1
SOT–416/SC–90
COLLECTOR
3
2SC4617 = B9
THERMAL CHARACTERISTICS
Rating
Symbol
Power Dissipation(1)
PD
Junction Temperature
TJ
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Max
Unit
125
mW
150
°C
– 55 ~ + 150
°C
Symbol
Min
1
BASE
2
EMITTER
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 50 µAdc, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
—
—
Vdc
Emitter-Base Breakdown Voltage (IE = 50 µAdc, IE = 0)
V(BR)EBO
5.0
—
—
Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
—
—
0.5
µA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage(2)
(IC = 60 mAdc, IB = 5.0 mAdc)
DC Current Gain(2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
IEBO
—
VCE(sat)
—
—
0.5
µA
Vdc
—
0.4
hFE
—
120
—
560
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
—
180
—
MHz
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
COB
—
2.0
—
pF
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Thermal Clad is a trademark of the Bergquist Company
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
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