2SD1880 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD1880

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1880

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A

VBEsat

Base-emitter saturation voltage

IC=6A ;IB=1.2A

ICBO

Collector cut-off current

VCB=800V ;IE=0

IEBO

Emitter cut-off current

VEB=4V ;IC=0

ICES

Collector cut-off current

VCE=1500V

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

VF

Diode forward voltage

tf

Fall time

IEC=8A

IC=6A;RL=33.3@

IB1=1.2A IB2=-2.4A;VCC=200V

MIN TYP. MAX UNIT

800

V

5

V

1.5

V

10

µA

40

130 mA

1.0

mA

8

5

10

2

V

0.1

0.3

µs

2

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