2SB1386 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SB1386

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1386 TRANSISTOR (PNP)

FEATURES

z Low collector saturation voltage

z Execllent current-to-gain characteristics

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

Value

Unit

-30

V

SOT-89-3L

1. BASE

2. COLLECTOR 1

2

3. EMITTER

3

VCEO

VEBO

IC

ICP*

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Pulsed Collector Current

PC

Collector Power Dissipation

TJ

Junction Temperature

Tstg

Storage Temperature

*Single pulse,PW=10ms

-20

V

-6

V

-5

A

-10

A

0.5

W

150

℃

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=-50μA,IE=0

V(BR)CEO IC=-1mA,IB=0

V(BR)EBO IE=-50μA,IC=0

ICBO

VCB=-20V,IE=0

IEBO

VEB=-5V,IC=0

hFE

VCE=-2V,IC=-500mA

VCE(sat) IC=-4A,IB=-100mA

fT

VCE=-6V,IC=-50mA,f=30MHz

Cob

VCB=-20V,IE=0,f=1MHz

Min Typ

-30

-20

-6

82

120

60

Max Unit

V

V

V

-0.5

μA

-0.5

μA

390

-1

V

MHz

pF

CLASSIFICATION OF hFE

Rank

P

Range

82-180

Marking

BHP

Q

120-270

BHQ

R

180-390

BHR

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