2SB1386 데이터 시트보기 (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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2SB1386

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• Low collector saturation voltage,

• Execllent current-to-gain characteristics

2SB1386 (PNP)

Maximum Ratings (Ta=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

-30

VCEO

-20

VEBO

-6

IC

-5

PC

0.5

TJ

150

Tstg

-55to +150

Unit

V

V

V

A

W

ELECTRICAL CHARACTERISTICS ( @ Ta=25

Parameter

Symbol

unless otherwise specified)

Test conditions

Collector-base breakdown voltage

VCBO

IC=-50μA,IE=0

Collector-emitter breakdown voltage

VCEO

IC=-1mA,IB=0

Emitter-base breakdown voltage

VEBO

IE=-50μA,IC=0

Collector cut-off current

ICBO VCB=-20V,IE=0

Emitter cut-off current

IEBO VEB=-5V,IC=0

DC current gain

hFE VCE=-2V,IC=-500mA

Collector-emitter saturation voltage

VCE(sat) IC=-4A,IB=-100mA

Transition frequency

fT

VCE=-6V,IC=-50mA,f=30MHz

Collector output capacitance

Cob VCB=-20V,IE=0,f=1MHz

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

Min Typ Max Unit

-30

V

-20

V

-6

V

-0.5

μA

-0.5

μA

82

390

-1

V

120

MHz

60

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

P

82-180

BHP

Q

120-270

BHQ

R

180-390

BHR

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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