2SB1386 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SB1386

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SB1 38 6

TRANSISTOR(PNP)

FEATURES

z Low collector saturation voltage,

z Execllent current-to-gain characteristics

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

VEBO

IC

PC

TJ

Tstg

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-30

-20

-6

-5

0.5

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=-50μA,IE=0

V(BR)CEO IC=-1mA,IB=0

V(BR)EBO IE=-50μA,IC=0

ICBO

VCB=-20V,IE=0

IEBO

VEB=-5V,IC=0

hFE

VCE=-2V,IC=-500mA

VCE(sat) IC=-4A,IB=-100mA

fT

VCE=-6V,IC=-50mA,f=30MHz

Cob

VCB=-20V,IE=0,f=1MHz

MIN TYP MAX UNIT

-30

V

-20

V

-6

V

-0.5

μA

-0.5

μA

82

390

-1

V

120

MHz

60

pF

CLASSIFICATION OF hFE

Rank

P

Range

82-180

Marking

BHP

Q

120-270

BHQ

R

180-390

BHR

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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