SMBD 6100
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 1 mA
IF = 100 mA
Reverse current
VR = 50 V
AC characteristics
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
Test circuit for reverse recovery time
Symbol
Values
Unit
min. typ. max.
V(BR)
VF
IR
70
–
550 –
850 –
–
–
–
V
mV
700
1100
100 nA
CD
–
–
2.5 pF
trr
–
–
15 ns
Pulse generator: tp = 100 ns, D = 0.05
tr = 0.6 ns, Rj = 50 Ω
Oscillograph: R = 50 Ω
tr = 0.35 ns
C ≤ 1 pF
Semiconductor Group
2