7N60L 데이터 시트보기 (PDF) - Unisonic Technologies
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7N60L Datasheet PDF : 7 Pages
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7N60
TYPICAL CHARACTERISTICS
On-Region Characteristics
101
V GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :5.5V
100
10-1
10-1
*Notes:
1. 250μs Pulse Test
2. TC=25℃
100
101
Drain-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain Current
and Gate Voltage
2.5
2.0
VGS=10V
VGS=20V
1.5
1.0
0.5
0.0
0
*Note: TJ=25℃
5
10
15
20
25
Drain Current, ID (A)
2000
1800
1000
800
400
Capacitance Characteristics
Coss
Ciss=Cgs+Cgd
(Cds=shorted)
Coss=Cds+Cgd
Ciss Crss=Cgd
*Notes:
Crss
1. VGS=0V
2. f = 1MHz
0
10-1
100
101
Drain-SourceVoltage, VDS (V)
Power MOSFET
Transfer Characteristics
101
100
10-1
2
150℃
25℃
-55℃
*Notes:
1. VDS=50V
2. 250μs Pulse Test
4
6
8
10
Gate-Source Voltage, VGS (V)
Body Diode Forward Voltage Variation vs.
Source Current and Temperature
101
100
10-1
0.2
150℃
*Notes:
25℃ 1. VGS=0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
Source-Drain Voltage, VSD (V)
102
101
100
10-1
100
Maximum Safe Operating Area
Operation in This Area
is Limited by RDS(on)
100μs
1ms
10ms
DC
*Notes:
1. Tc=25℃
2. TJ=150℃
3. Single Pulse
101
102
103
Drain-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R502-076,B
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