7N60AF 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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7N60AF Datasheet PDF : 8 Pages
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SEMICONDUCTOR
Fig.5 Capacitance characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
0
1
CISS=CGS+CGD (CDS=shorted)
COSS=CDS+CGD CRSS=CGD
CISS
COSS
CRSS
Notes:
1.VGS=0V
2.f=1MHz
10
100
Drain-Source voltage, VDS (V)
7N60 Series RRooHHSS
Nell High Power Products
Fig.6 Gate charge characteristics
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
*Note:ID=7A
0
0
5
10
15
20 25
30
Total gate charge, QG (nC)
Fig.7 Breakdown voltage variation
vs. Junction temperature
1.2
1.1
1
0.9
0.8
-100 -50
0
*Notes:
1.VGS=0V
2.ID=250µA
50 100 150 200
Junction temperature, TJ (°C)
Fig.9 Maximum safe operating area for TO-220
102
Operation in This Area is Limited by RDS(on)
100µs
101
1ms
10ms
100ns
DC
100
10-1
10-2
100
*Notes:
1.TJ=25°C
2.T=150°C
3.Single pulse
101
102
103
Drain-source voltage, VDS (V)
Fig.8 On-resistance variation vs. Junction
temperature
3
2.5
2
1.5
1
0.5
0.0
-100 -50
0
*Notes:
1.VGS=10V
2.ID=4A
50 100 150 200
Junction temperature, TJ (°C)
Fig.10 Maximum safe operating area
for TO-220F
102
Operation in This Area is Limited by RDS(on)
10µs
101
100µs
1ms
10ms
100ms
100
DC
10-1
10-2
100
*Notes:
1.TJ=25°C
2.TJ=150°C
3.Single pulse
101
102
103
Drain-source voltage, VDS (V)
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