STW57N65M5-4 데이터 시트보기 (PDF) - STMicroelectronics

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STW57N65M5-4

N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package

STMicroelectronics 

STW57N65M5-4

3

Test circuits

Test circuits

Figure 15. Switching times test circuit for

resistive load

VD

VGS

RG

PW

RL

2200

mF

D.U.T.

GND1

(driver signal)

GND2

(power)

3.3

mF VDD

AM15855v1

Figure 16. Gate charge test circuit

VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

mF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

1kΩ

GND1

GND2 AM15856v1

Figure 17. Test circuit for inductive load

switching and diode recovery times

Figure 18. Unclamped inductive load test circuit

G

25 W

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100mH

B

3.3

B

mF

D

G

RG

S

1000

mF

VDD

Vi

L

VD

2200

3.3

mF

mF

VDD

ID

D.U.T.

GND1

GND2

AM15857v1

Figure 19. Unclamped inductive waveform

V(BR)DSS

VD

Pw

GND1

GND2

AM15858v1

Figure 20. Switching time waveform

&RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII

,G

9GV

,G

VDD

IDM

ID

VDD

9JV

9JV RQ

9GV

9GV

9JV,W

AM01472v1

7GHOD\RII

7ULVH

7IDOO

7FU RVV RYHU

,G

$0Y

DocID024559 Rev 2

9/14

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