2SC2884 데이터 시트보기 (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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2SC2884

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• Suitable for output stage of 3 watts amplifier.

• High DC current gain.

• Small flat package.

• PC=1.0 to 2.0W.

• Complements the 2SA1204.

2SC2884 (NPN)

Maximum Ratings (Ta=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

35

VCEO

30

VEBO

5

IC

0.8

PC

0.5

TJ

150

Tstg

-55to +150

Unit

V

V

V

A

W

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)

Parameter

Collector-emitter breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

VCEO

ICBO

IEBO

hFE

VCE(sat)

VBE

fT

Cob

Test conditions

IC=10mA,IB=0

VCB=35V,IE=0

VEB=5V,IC=0

VCE=1V,IC=100mA

IC=0.5A, IB=0.02A

VCE=1V, IC=10mA

VCE=5V,Ic=10mA

VCB=10V,IE=0,f=1MHz

CLASSIFICATION OF hFE

Rank

Range

Marking

O

100-200

PO1

Min Typ Max Unit

35

V

0.1 μA

0.1 μA

100

320

0.5 V

0.5

0.8 V

120

MHz

13

pF

Y

160-320

PY1

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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