BD244B 데이터 시트보기 (PDF) - Power Innovations
부품명
상세내역
제조사
BD244B Datasheet PDF : 6 Pages
| |||
BD244, BD244A, BD244B, BD244C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD244
-45
Collector-emitter
V(BR)CEO breakdown voltage
IC = -30 mA
(see Note 5)
IB = 0
BD244A
BD244B
BD244C
-60
-80
-100
VCE = -55 V
VBE = 0
BD244
-0.4
Collector-emitter
ICES cut-off current
VCE = -70 V
VCE = -90 V
VBE = 0
VBE = 0
BD244A
BD244B
-0.4
-0.4
VCE = -115 V
VBE = 0
BD244C
-0.4
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB = 0
IB = 0
BD244/244A
BD244B/244C
-0.7
-0.7
Emitter cut-off
IEBO current
VEB = -5 V
IC = 0
-1
Forward current
hFE
transfer ratio
VCE = -4 V
VCE = -4 V
IC = -0.3 A
IC = -3 A
30
(see Notes 5 and 6)
15
Collector-emitter
VCE(sat) saturation voltage
IB = -1 A
IC = -6 A
(see Notes 5 and 6)
-1.5
Base-emitter
VBE
voltage
VCE = -4 V
IC = -6 A
(see Notes 5 and 6)
-2
Small signal forward
hfe
current transfer ratio VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
|hfe|
Small signal forward
current transfer ratio
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.92 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = -1 A
VBE(off) = 3.7 V
IB(on) = -0.1 A
RL = 20 Ω
IB(off) = 0.1 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3
µs
1
µs
PRODUCT INFORMATION
2
Share Link: 