7N60A4D 데이터 시트보기 (PDF) - Intersil
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7N60A4D Datasheet PDF : 8 Pages
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HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
ALL TYPES
600
34
14
56
±20
±30
35A at 600V
125
1.0
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-On Energy
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 250µA, VGE = 0V
VCE = 600V
TJ = 25oC
TJ = 125oC
IC = 7A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
TJ = 150oC, RG = 25Ω, VGE = 15V,
L = 100µH, VCE = 600V
IC = 7A, VCE = 300V
IC = 7A,
VCE = 300V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC,
ICE = 7A,
VCE = 390V, VGE = 15V,
RG = 25Ω,
L = 1mH,
Test Circuit (Figure 24)
MIN TYP MAX UNITS
600
-
-
V
-
-
250
µA
-
-
2
mA
-
1.9
2.7
V
-
1.6
2.2
V
4.5
5.9
7
V
-
-
±250
nA
35
-
-
A
-
9
-
V
-
37
45
nC
-
48
60
nC
-
11
-
ns
-
11
-
ns
-
100
-
ns
-
45
-
ns
-
55
-
µJ
-
120
150
µJ
-
60
75
µJ
-
10
-
ns
-
7
-
ns
-
130
150
ns
-
75
85
ns
-
50
-
µJ
-
200
215
µJ
-
125
170
µJ
2-2
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