3N60A4 데이터 시트보기 (PDF) - Fairchild Semiconductor
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3N60A4 Datasheet PDF : 8 Pages
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Data Sheet
HGTD3N60A4S, HGTP3N60A4
August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25oC and
150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49327.
Ordering Information
PART NUMBER
HGTD3N60A4S
PACKAGE
TO-252AA
BRAND
3N60A4
HGTP3N60A4
TO-220AB
3N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• 12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-252AA
G
E
COLLECTOR
(FLANGE)
JEDEC TO-220AB
COLLECTOR
(FLANGE)
E
C
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
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