FQD8P10TF_NB82052 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQD8P10TF_NB82052 Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
101
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
100 Bottom : -4.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
1.2
V = - 10V
GS
0.9
VGS = - 20V
0.6
0.3
※ Note : TJ = 25℃
0.0
0
5
10
15
20
25
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10-1
Coss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -20V
10
DS
V = -50V
DS
8
VDS = -80V
6
4
2
※ Note : ID = -8.0 A
0
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, August 2002
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