FDS6612A(1998) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6612A Datasheet PDF : 8 Pages
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Typical Electrical And Thermal Characteristics
10
ID = 8.4A
8
6
VDS = 5V
10V
15V
4
2
0
0
3
6
9
12
15
18
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
2000
1000
500
C iss
200
C oss
f = 1 MHz
100
VGS = 0V
C rss
50
0.1
0.4
1
2
5
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
80
30
10
RDS(ON) LIMIT
3
1
0.3
VGS = 10V
0.1
SINGLE PULSE
100us
1ms
10ms
100ms
1s
D1C0s
0.03
RθJA =125°C/W
TA = 25°C
0.01
0.1 0.2
0.5 1
2
5 10 20 30 50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =125°C/W
TA = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 125°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6612A Rev.C1
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