TK20E60U(2014) 데이터 시트보기 (PDF) - Toshiba
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TK20E60U Datasheet PDF : 9 Pages
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MOSFETs Silicon N-Channel MOS (DTMOS)
TK20E60U
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 12 S (typ.)
(3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
(4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK20E60U
1: Gate (G)
2: Drain (D)(Heatsink)
3: Source (S)
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 3)
(Note 1)
(Note 1)
ID
IDP
PD
EAS
IAR
EAR
IDR
IDRP
Tch
20
A
40
190
W
144
mJ
10
A
19
mJ
20
A
40
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2010-12
1
2014-01-06
Rev.2.0
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