S101S16F 데이터 시트보기 (PDF) - Sharp Electronics
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S101S16F
Sharp Electronics
S101S16F Datasheet PDF : 13 Pages
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■ Absolute Maximum Ratings
(Ta=25˚C)
Input
Parameter
Forward current
Reverse voltage
RMS ON-state current
Peak one cycle surge current
Symbol
IF
VR
IT(rms)
Isurge
Rating
50 *3
6
3 *3
30 *4
Unit
mA
V
A
A
Output
Repetitive
peak OFF-state voltage
Non-Repetitive
peak OFF-state voltage
VDRM
400
V
VDSM
400
V
Critical rate of rise of ON-state current dIT/dt
40
A/µs
Operating frequency
*1Isolation voltage
Operating temperature
f
45 to 65 Hz
Viso(rms) 3.0
kV
Topr −20 to +80 ˚C
Storage temperature
*2Soldering temperature
Tstg −30 to +100 ˚C
Tsol
260
˚C
*1 40 to 60%RH, AC for 1minute, f=60Hz
*2 For 10s
*3 Refer to Fig.1, Fig.2
*4 f=60Hz sine wave, Tj=25˚C start
S101S16V Series
Soldering area
■ Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
Forward voltage
Input
Reverse current
VF
IF=20mA
−
IR
VR=3V
−
ON-state voltage
VT(rms) IT(rms)=1.5A, Resistance load, IF=20mA −
Minimum Operating current
IOP(rms)
VOUT(rms)=120V
−
Output Open circuit leak current
Ileak(rms)
VOUT(rms)=120V
−
Critical rate of rise of OFF-state voltage dV/dt
VD=2/3•VDRM
30
Critical rate of rise of OFF-state voltage at commutaion (dV/dt)c Tj=125˚C, VD=2/3•VDRM, dIT/dt=−1.5A/ms 4
Minimum trigger current
IFT
VD=6V, RL=30Ω
−
Transfer Zero cross voltage
charac- Isolation resistance
teristics Turn-on time
VOX
IF=15mA
−
RISO
DC500V, 40 to 60%RH
1010
ton
VD(rms)=100V, AC50Hz
−
Turn-off time
toff IT(rms)=1.5A,Resistance load,IF=20mA −
Thermal resistance
Rth(j-c)
Between junction and case
−
Rth(j-a)
Between junction and ambient
−
TYP.
1.2
−
−
−
−
−
−
−
−
−
−
−
6.0
45
(Ta=25˚C)
MAX. Unit
1.4 V
100 µA
1.5 V
50 mA
5 mA
− V/µs
− V/µs
15 mA
35 V
−
Ω
10 ms
10 ms
−
˚C/W
−
Sheet No.: D4-A03101EN
4
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