CXT5551 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
부품명
상세내역
제조사
CXT5551 Datasheet PDF : 4 Pages
| |||
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Switching and amplification in high voltage.
z Low current(max. 600mA)
z High voltage (max. 180V)
Pb
Lead-free
Production specification
CXT5551
APPLICATIONS
z High voltage amplifier application.
ORDERING INFORMATION
Type No.
Marking
CXT5551
1G6
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance
Junction and Storage Temperature
180
160
6
600
0.625
250
-65 to +150
Units
V
V
V
mA
W
℃/W
℃
E059
Rev.A
www.gmicroelec.com
1
Share Link: 