CXT5551 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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CXT5551 Datasheet PDF : 4 Pages
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Production specification
NPN Silicon Epitaxial Planar Transistor
CXT5551
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
180
V
Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA,IB=0
160
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=120V,IE=0
50 nA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
Small-signal current gain
hfe
Noise Figure
NF
VEB=4V,IC=0
50 nA
VCE = 5V; IC= 1mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50mA
IC=10mA, IB= 1mA
IC=50mA, IB= 5mA
IC=10mA, IB= 1mA
IC=50mA, IB= 5mA
VCE=10V, IC= 10mA,
f=100MHz
80
100 300
30
0.15
V
0.20
1.0
V
1.0
100 300 MHz
VCB=10V,IE=0,f=1MHz
6.0 pF
IC=1mA,VCE=10V,
f=1.0kHz
50 200
IC=200uA,VCE=5V,
f=10-15.7kHz,RS=1.0Ω
8
dB
E059
Rev.A
www.gmicroelec.com
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