BR24C01A-W 데이터 시트보기 (PDF) - ROHM Semiconductor

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BR24C01A-W

I2C BUS compatible serial EEPROM

ROHM Semiconductor 

Memory ICs

BR24C01A-W / BR24C01AF-W / BR24C01AFJ-W / BR24C01AFV-W / BR24C02-W / BR24C02F-W /

BR24C02FJ-W / BR24C02FV-W / BR24C04-W / BR24C04F-W / BR24C04FJ-W / BR24C04FV-W

I2C BUS compatible serial EEPROM

BR24C01A-W / BR24C01AF-W / BR24C01AFJ-W /

BR24C01AFV-W / BR24C02-W / BR24C02F-W /

BR24C02FJ-W / BR24C02FV-W / BR24C04-W /

BR24C04F-W / BR24C04FJ-W / BR24C04FV-W

The BR24C01A-W, BR24C02-W, and BR24C04-W series are 2-wire (I2C BUS type) serial EEPROMs which are

electrically programmable.

∗ I2C BUS is a registered trademark of Philips.

!Applications

VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches

!Features

1) 128×8bits (1k) serial EEPROM.

(BR24C01A-W / AF-W / AFJ-W / AFV-W)

256×8bits (2k) serial EEPROM.

(BR24C02-W / F-W / FJ-W / FV-W)

512×8bits (4k) serial EEPROM.

(BR24C04-W / F-W / FJ-W / FV-W)

2) Two wire serial interface.

3) Operating voltage range : 2.7V∼5.5V

4) Low current consumption

Active (at 5V) : 1.5mA (Typ.)

Standby (at 5V) : 0.1µA (Typ.)

5) Auto erase and auto complete functions can be used

during write operations.

6) Page write function.

BR24C01A-W / AF-W / AFJ-W / AFV-W : 8 bytes

BR24C02-W / F-W / FJ-W / FV-W : 8 bytes

BR24C04-W / F-W / FJ-W / FV-W : 16 bytes

7) DATA security

Write protect feature

Inhibit to WRITE at low VCC

8) Noise filters at SCL and SDA pins.

9) Address can be incremented automatically during

read operations.

10) Compact packages.

11) Rewriting possible up to 100,000 times

12) Data can be stored for ten years without corruption.

!Absolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Limits

Unit

Applied voltage

Power dissipation

VCC

−0.3~+6.5

V

300(SSOP−B8)

∗1

Pd

450(SOP8, SOP−J8) ∗2

mW

800(DIP8)

∗3

Storage temperature

Tstg

−65~+125

°C

Operating temperature

Topr

−40~+85

°C

Input voltage

−

−0.3~VCC+0.3

V

∗1 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.

∗2 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.

∗3 Reduced by 8.0mW for each increase in Ta of 1°C over 25°C.

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