FQB19N20L_13 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQB19N20L_13 Datasheet PDF : 8 Pages
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FQB19N20L
N-Channel QFET® MOSFET
200 V, 21 A, 140 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 21̀ A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,.
ID = 9.7 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
FQB19N20LTM
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Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQB19N20LTM
0.89
62.5
40
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
1
FQB19N20L Rev. C1
www.fairchildsemi.com
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