Transistors
2SK2715
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-source leakage
IGSS
−
− ±100 nA VGS=±30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500
−
−
V ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS
−
−
100
µA VDS=500V, VGS=0V
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
VGS(th)
2.0
RDS(on)∗
−
| Yfs | ∗ 0.6
−
4.0
3.0 4.0
1.5
−
V VDS=10V, ID=1mA
Ω ID=1A, VGS=10V
S ID=1A, VDS=10V
Input capacitance
Ciss
−
280 −
pF VDS=10V
Output capacitance
Coss
−
58
−
pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
∗ Pulsed
Crss
−
td(on) ∗
−
tr ∗
−
td(off) ∗
−
tf ∗ −
trr ∗
−
Qrr ∗
−
23
−
10
−
12
−
30
−
63
−
410 −
1.7
−
pF f=1MHz
ns ID=1A, VDD 150V
ns VGS=10V
ns RL=150Ω
ns RG=10Ω
ns IDR=2A, VGS=0V
µC di/dt=100A/µs
zElectrical characteristic curves
10
5
2
1
OpiserlaimtioitnedinbtyhiRsDaSr(oena)
0.5
0.2
0.1
0.05
P
DC OWp=e1r0a0tmio1ns0ms
0.02 Tc=25°C
0.01 Single pulse
1 2 5 10 20
50 100 200 500 1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Maximum safe operating area
2.0
VGS=10V
Ta=25°C
1.8
Pulsed
6V
1.6
1.4
1.2
5V
1.0
0.8
0.6
0.4
4.5V
0.2
4V
0
0 1 2 3 4 5 6 7 8 9 10
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.2 Typical output characteristics
10
VDS=10V
Pulsed
5
2
1
0.5
Ta=−25°C 25°C
75°C
125°C
0.2
0.1
0.05
012345678
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical transfer characteristics
6.4
VDS=10V
lD=1mA
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.4 Gate threshold voltage
vs. channel temperature
50
VGS=4V
Pulsed
20
10
Ta=125°C
5
75°C
25°C
2
−25°C
1
0.5
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
DRAIN CURRENT : ID (A)
8
Ta=25°C
7
Pulsed
6
5
4
ID=2A
3
1A
2
1
0
5 10 15 20 25 30
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static drain-source on-state Fig.6 Static drain-source on-state
resistance vs. drain current
resistance vs. gate-source voltage
Rev.B
2/4