FDC606P 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDC606P

P-Channel 1.8V Specified PowerTrench® MOSFET

Fairchild Semiconductor 

December 2001

FDC606P

P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –6 A, –12 V.

RDS(ON) = 26 mΩ @ VGS = –4.5 V

RDS(ON) = 35 mΩ @ VGS = –2.5 V

RDS(ON) = 53 mΩ @ VGS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

S

D

D

SuperSOT TM-6

G

DD

1

6

2

5

3

4

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Maximum Power Dissipation

(Note 1a)

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.606

FDC606P

7’’

Ratings

–12

±8

–6

–20

1.6

0.8

–55 to +150

78

30

Tape width

8mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

3000 units

2001 Fairchild Semiconductor Corporation

FDC606P Rev E (W)

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