BC618G(2007) 데이터 시트보기 (PDF) - ON Semiconductor
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BC618G Datasheet PDF : 6 Pages
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BC618
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mA, IB = 0.2 mA)
Base −Emitter Saturation Voltage
(IC = 200 mA, IB = 0.2 mA)
DC Current Gain
(IC = 100 mA, VCE = 5.0 Vdc)
(IC = 10 mA, VCE = 5.0 Vdc)
(IC = 200 mA, VCE = 5.0 Vdc)
(IC = 1.0 A, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 5.0 V, IE = 0, f = 1.0 MHz)
Symbol
Min
Typ
Max
Unit
V(BR)CEO
55
−
Vdc
−
V(BR)CBO
80
−
Vdc
−
V(BR)EBO
12
−
Vdc
−
ICES
nAdc
−
−
50
ICBO
nAdc
−
−
50
IEBO
nAdc
−
−
50
VCE(sat)
−
Vdc
−
1.1
VBE(sat)
−
Vdc
−
1.6
hFE
−
2000
−
−
4000
−
−
10000
−
50000
4000
−
−
fT
MHz
150
−
−
Cob
pF
−
4.5
7.0
Cib
pF
−
5.0
9.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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