BC856A 데이터 시트보기 (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

부품명

상세내역

제조사

BC856A

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol Test conditions

Min Max Unit

Collector-base breakdown voltage BC856

-80

BC857

VCBO IC= -10μA, IE=0

-50

V

BC858

-30

Collector-emitter breakdown voltage BC856

-65

BC857

VCEO IC= -10mA, IB=0

-45

V

BC858

-30

Emitter-base breakdown voltage

VEBO IE= -1μA, IC=0

-5

V

Collector cut-off current

Collector cut-off current

Emitter cut-off current

BC856

BC857

BC858

BC856

BC857

BC858

ICBO

ICEO

IEBO

VCB= -70 V , IE=0

VCB= -45 V , IE=0

VCB= -25 V , IE=0

VCE= -60 V , IB=0

VCE= -40 V , IB=0

VCE= -25 V , IB=0

VEB= -5 V , IC=0

-0.1 μA

-0.1 μA

-0.1 μA

DC current gain

BC856A, 857A,858A

BC856B, 857B,858B

BC857C,BC858C

Collector-emitter saturation voltage

125

250

hFE VCE= -5V, IC= -2mA

220

475

420

800

VCE(sat) IC=-100mA, IB= -5 mA

-0.5

V

Base-emitter saturation voltage

VBE(sat) IC= -100mA, IB= -5mA

-1.1

V

Transition frequency

Collector capacitance

fT

VCE= -5 V, IC= -10mA

100

MHz

f=100MHz

Cob VCB=-10V, f=1MHz

4.5

pF

BC856A/B

BC857A/B/C Typical Characteristics

BC858A/B/C

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

Page:P3-P2

Share Link: